Microfabrication Platform for Deep Etching of SiO2
Introduction
ITRC provides SiO2 dry etching processing service. Based on diffraction optical design and nano-structure processing technology of silicon, our SiO2 dry etching processing technology has provided a stable platform for nano/micro researches and cooperative frontier researches with the academia. This SiO2 deep etching platform can fabricate high optical quality nano/micro optical devices that enable a more completive of diffraction optical design, production and inspection. The etched side wall angle of 90º ± 2º and surface roughness of 10 nm are both achievable.
Properties
- Size: 4" SiO2 wafer
- Material: quartz, Pyrex, SiO2
- Etching rate: 0.225 µm/ min
- Surface roughness: less than 10 nm
- Uniformity: ± 4%
- Etching depth: 100 nm (min.) − 45 µm (max.)
- Aspect ratio: 1 − 4 (max.)
- Side wall angle: 90º ± 2º
- Selectivity: 1.5 : 1 (photoresist) − 40 : 1 (metal)
Applications
- Fiber-optic communication
- Micro optical switch
- Nano-structure etching
- Accelerometer
- Gyroscope
2009/8/14 updated
