Electron Beam Lithography
Introduction
Electron beam lithography (EBL) plays a key role in next-generation lithography technology (NGL). In order to overcome the limitation on the diffraction of photolithography, the technology uses a focused electron beam to directly write on a compatible resist, providing a pattern resolution from submicron to a few nanometers.
Technology
Raith 50 Electron beam system
- Positive-type resist PMMA EBL
- Negative-type resist SU-8 EBL
- Two-layer metal lift-off technology
- Gray-scale Lithography
Specification
- PMMA: Min. linewidth 80 nm, aspect ratio 2:1
- SU-8: Min. linewidth 500 nm, aspect ratio 1:1
- Two-layer lift-off: Pt, Au, Min. linewidth 100 nm
- Gray-scale Lithography: Max. thickness ≤ 2 µm, gray-scale 128 levels
Application
- Microelectronics: single-electron transistor, T-gate
- Micro-optics: sub-wavelength grating, photonic crystal
- Micro-fluidics: nanotexture
- Bio-medicine: scaffold for tissue engineering, nano-pore
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| PMMA EBL | SU-8 EBL | Lift-off EBL | Gray-scale EBL |
