Focused Ion Beam Fabrication
Introduction
This system in ITRC has both the advantages of SEM and FIB so that it could be used for manufacturing and observation at the same time. Besides, there are two kinds of assisted gas available, platinum and TEOS, which can be deposited on the substrate, and the etching rate of materials such as polymer, metal and oxide also can be improved by corresponding assisted gases, SCM, EE and IEE respectively.
Technology
Focused ion beam system
- Nano-scale directly etching
- 3D structure deposition
Specification
- Ion beam etching limit (trench): 30 nm
- Pt deposition limit (line):
30 nm (e-beam)
110 nm (ion-beam)
Application
- Photonic crystal fabrication
- High aspect ratio tip fabrication
- 3D structure deposition
- TEM sample preparation
- Failure analysis
- Circuit repair
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| Photonic crystal fabrication | High aspect ratio tip (etching) | High aspect ratio tip (deposition) |
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| 3D structure deposition (A) | 3D structure deposition (B) | TEM sample preparation |
