Inductively Coupled Plasma Reactive Ion Etch (I)

Introduction

Inductively coupled plasma (ICP) reactive ion etch is a silicon etching process using plasma. It provides good anisotropic etching on silicon. It is also one of the major techniques to build some devices such as micro-sensors and micro-actuators where high-aspect ratio etching process is required. Moreover, a smooth sidewall etching process is a key technology for manufacturing micro-optical MEMS and precise molding.

Technology

ICP-RIE system

4" silicon wafer
High aspect ratio etching process
Smooth sidewall etching prcoess
Compatible with semiconductor process

Specification

High aspect ratio etching process:
Verticality 90±1°
Aspect ratio 25–30
Etching Depth > 200 µm
Smooth sidewall etching process:
Verticality 90±1°
Sidewall roughness Rms ~ 10 nm
Etching Depth ~ 50 µm

Application

MEMS, Optical-MEMS, Molding and Package etc.

Optical switch	2 µm wide trench structure
30 µm wide trench structure	Concave grating