Electron-Beam Gun Evaporation Method with Ion-Assisted Deposition
Introduction
III-V compound semiconductors have attracted much attention due to their potential in optoelectronic applications. Based on the UHV technology, the chemical beam epitaxy system (CBE) has been developed for the growth of III-V nitride-based materials. CBE combines the advantages of both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) systems, which have been widely used for the preparation of nitride-based compounds. The aim of the present work is to optimize the growth conditions for III-nitrides, and to further develop innovative methods for fabricating micro- and nano-scale photonic structure devices.
Technology
- III-V nitride-based compounds growth
- Low-dimensional nanostructure materials
- in-situ RHEED analysis
Specification
- Background pressure: 10−5 – 10−9 Torr
- Growth temperature: 350 – 1100 °C
- Substrate: 2"
Application
- High mobility electronic devices
- Solid-state illumination
- High-density optical storage devices
- Solar cell
GaN
Mirror-like AlN buffer
GaN 1D nanostructure
