Equipment & Process Technolgoy for Nano/Micro Device
Atomic Layer Deposition
ALD System
Purpose
Atomic layer deposition (ALD) has been regarded as an enabling technology to push the semiconductor manufacturing process beyond limit. ALD is carried out by using separately introducing reactant gases to reactor chamber. Solid-gas reaction of ALD prevents the unwanted chemical vapor deposition and improves the coating uniformity over a large wafer. ITRC was the first research team in Taiwan to develop a home-designed and -made ALD system. We also have collaborations with several research team (NTU, NTHU, and NCTU) to study the microstructues of ALD films and applications on nanotechnology and semiconductor. The layer-by-layer growth is demonstrated by using in-situ quartz crystal microbalance.
Specifications & Features
The process parameters, such as length of gas exposure and purge, and substrate temperature, can adjusted to optimize the thin film properties.
- Features
- Thickness control at atomic level
- High comformality
- Excellent film uniformity
- In-situ thickness monitoring
- Specifications
- Wafer size: 4 inch
- Growth temp.: RT-300 °C
- Growth rate: ~1 Å/cycle for Al2O3; ~ 2 Å/cycle for ZnO
- Monitoring resolution: 0.1 Å
Applications
- High-k materials
- DRAM capacitor
- Diffusion barrier
- MEMS protective layer
Thickness contour of Al2O3 film (100 cycles) on 4" Si Wafer
In-situ thickness monitoring for ZnO film (growth rate 2 Å/cycle)
Coating on high aspect-ratio structure (PS nanospheres) by ALD
Contact
Zhizhong Ke
E-mail: g893552@itrc.org.tw
