Equipment & Process Technolgoy for Nano/Micro Device
Chemical Beam Exitaxial System
Purpose
III-V compound semiconductors have attracted much attention due to their potential in optoelectronic applications. Based on the UHV technology established, we have developed a chemical beam epitaxial system (CBE) to grow the nitride-based materials. This system combines the advantages of both metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) techniques, which have been widely used for the preparing of nitride-based compounds. In this project, our focus is to optimize the growth conditions for III-nitrides, and to further develop innovative methods for fabricating micro- and nano-scale photonic structures devices.
Specifications & Features
The chemical beam epitaxial system contains three major parts, including control panel of metalorganic gas, RF nitrogen plasma generator and sample manipulator. We can modify growth parameters, e.g. III/V ratio, growth time and substrate temperature, to investigate the influence on structural and electro-optical properties of epitaxial films. Besides the morphology and thickness of the grown layers can be monitored by in-situ reflection-high energy electron diffraction (RHEED) as well.
- Vacuum: 10−5 – 10−9 Torr
- Growth temperature: 350 °C – 1100 °C
- Substrate: ≤ 2 inches
Applications
- High mobility electronic devices
- Solid-state illumination
- High-density optical storage devices
The appearance of CBE system
Mirror-like AlN film
Cross-sectional SEM image of GaN film
One-dimensional GaN nanorods
Contact
Shou-Yi Kuo
E-mail: u8624806@itrc.org.tw
